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Produktbild: Theory of Modern Electronic Semiconductor Devices

Theory of Modern Electronic Semiconductor Devices

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

07.03.2002

Verlag

John Wiley & Sons

Seitenzahl

464

Maße (L/B/H)

23,3/16,6/2,6 cm

Gewicht

757 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-471-41541-1

Beschreibung

Rezension

"A discussion of important emerging technologies and trends in semiconductor devices..." SciTech Book News

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

07.03.2002

Verlag

John Wiley & Sons

Seitenzahl

464

Maße (L/B/H)

23,3/16,6/2,6 cm

Gewicht

757 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-471-41541-1

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: GPSR Kontakt

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  • Produktbild: Theory of Modern Electronic Semiconductor Devices
  • PREFACE.
     
    1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS.
     
    1.1 Moore's Law and Its Implications.
     
    1.2 Semiconductor Devices for Telecommunications.
     
    1.3 Digital Communications.
     
    2 SEMICONDUCTOR HETEROSTRUCTURES.
     
    2.1 Formation of Heterostructures.
     
    2.2 Modulation Doping.
     
    2.3 Two-Dimensional Subband Transport at Heterointerfaces.
     
    2.4 Strain and Stress at Heterointerfaces.
     
    2.5 Perpendicular Transport in Heterostructures and Superlattices.
     
    2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties.
     
    Problems.
     
    3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.
     
    3.1 Motivation.
     
    3.2 Basics of Heterostructure Field-Effect Transistors.
     
    3.3 Simplified Long-Channel Model of a MODFET.
     
    3.4 Physical Features of Advanced State-of-the-Art MODFETs.
     
    3.5 High-Frequency Performance of MODFETs.
     
    3.6 Materials Properties and Structure Optimization for HFETs.
     
    Problems.
     
    4 HETEROSTRUCTURE BIPOLAR TRANSISTORS.
     
    4.1 Review of Bipolar Junction Transistors.
     
    4.2 Emitter-Base Heterojunction Bipolar Transistors.
     
    4.3 Base Transport Dynamics.
     
    4.4 Nonstationary Transport Effects and Breakdown.
     
    4.5 High-Frequency Performance of HBTs.
     
    4.6 Materials Properties and Structure Optimization for HBTs .
     
    Problems.
     
    5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE DIFFERENTIAL RESISTANCE, AND DEVICES.
     
    5.1 Introduction.
     
    5.2 k-Space Transfer.
     
    5.3 Real-Space Transfer.
     
    5.4 Consequences of NDR in a Semiconductor.
     
    5.5 Transferred Electron-Effect Oscillators: Gunn Diodes.
     
    5.6 Negative Differential Resistance Transistors.
     
    5.7 IMPATT Diodes.
     
    Problems.
     
    6 RESONANT TUNNELING AND DEVICES.
     
    6.1 Physics of Resonant Tunneling: Qualitative Approach.
     
    6.2 Physics of Resonant Tunneling: Envelope Approximation.
     
    6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction.
     
    6.4 Resonant Tunneling Diodes: High-Frequency Applications.
     
    6.5 Resonant Tunneling Diodes: Digital Applications.
     
    6.6 Resonant Tunneling Transistors.
     
    Problems.
     
    7 CMOS: DEVICES AND FUTURE CHALLENGES.
     
    7.1 Why CMOS?
     
    7.2 Basics of Long-Channel MOSFET Operation.
     
    7.3 Short-Channel Effects.
     
    7.4 Scaling Theory.
     
    7.5 Processing Limitations to Continued Miniaturization.
     
    Problems.
     
    8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING HARDWARE.
     
    8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe.
     
    8.2 Quantum-Dot Devices and Cellular Automata.
     
    8.3 Molecular Computing.
     
    8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing.
     
    8.5 Coulomb Blockade and Single-Electron Transistors.
     
    8.6 Quantum Computing.
     
    Problems.
     
    9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS.
     
    9.1 Landau Levels.
     
    9.2 Classical Hall Effect.
     
    9.3 Integer Quantum Hall Effect.
     
    9.4 Fractional Quantum Hall Effect.
     
    9.5 Shubnikov-de Haas Oscillations.
     
    Problems.
     
    REFERENCES.
     
    APPENDIX A: PHYSICAL CONSTANTS.
     
    APPENDIX B: BULK MATERIAL PARAMETERS.
     
    Table I: Silicon.
     
    Table II: Ge.
     
    Table III: GaAs.
     
    Table IV: InP.
     
    Table V: InAs.
     
    Table VI: InN.
     
    Table VII: GaN.
     
    Table VIII: SiC.
     
    Table IX: ZnS.
     
    Table X: ZnSe.
     
    Table XI : Al x Ga 1 fx As.
     
    Table XI I :