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  • Gebundenes Buch

Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technologyThe third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback…mehr

Produktbeschreibung
Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technologyThe third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:* An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions* A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements* Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET* Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gainPerfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
  • Produktdetails
  • Verlag: Wiley / Wiley & Sons
  • Artikelnr. des Verlages: 1W118449750
  • 3. Aufl.
  • Seitenzahl: 1200
  • Erscheinungstermin: 27. April 2021
  • Englisch
  • Abmessung: 257mm x 185mm x 51mm
  • Gewicht: 2000g
  • ISBN-13: 9781118449752
  • ISBN-10: 1118449754
  • Artikelnr.: 43610982
Autorenporträt
George D. Vendelin is Adjunct Professor at Stanford, Santa Clara, and San Jose State Universities, as well as UC-Berkeley-Extension. He is a Fellow of the IEEE and has over 40 years of microwave engineering design and teaching experience.Anthony M. Pavio, PhD, is Manager of the Phoenix Design Center for Rockwell Collins. He is a Fellow of the IEEE and was previously Manager at the Integrated RF Ceramics Center for Motorola Labs.Ulrich L. Rohde is a Professor of Technical Informatics, University of the Joint Armed Forces, in Munich, Germany; a member of the staff of other universities world-wide; partner of Rohde & Schwarz, Munich; and Chairman of the Board of Synergy Microwave Corporation. He is the author of two editions of Microwave and Wireless Synthesizers: Theory and Design.Dr.-Ing. Matthias Rudolph is Ulrich L. Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology in Cottbus, Germany and heads the low-noise components lab at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik in Berlin.
Inhaltsangabe
Foreword xvPreface xvii1 RF/Microwave Systems 11.1 Introduction 11.2 Maxwell's equations 121.3 Frequency bands, modes, and waveforms of operation 121.4 Analog and digital signals 161.5 Elementary functions 251.6 Basic RF transmitters and receivers 311.7 RF wireless/microwave/millimeter wave applications 331.8 Modern CAD for nonlinear circuit analysis 371.9 Dynamic Load Line 372 Lumped and Distributed Elements 432.1 Introduction 432.2 Transition from RF to Microwave Circuits 432.3 Parasitic Effects on Lumped Elements 462.4 Distributed Elements 542.5 Hybrid Element: Helical Coil 55vvi CONTENTS3 Active Devices 613.1 Microwave Transistors 613.1.1 Transistor Classiffication 613.1.2 Bipolar Transistor Basics 633.1.3 GaAs and InP Heterojunction Bipolar Transistors 773.1.4 SiGe HBTs 903.1.5 Field-Effect Transistor Basics 953.1.6 GaN, GaAs, and InP HEMTs 1063.1.7 MOSFETs 1123.1.8 Packaged Transistors 1303.2 Example: Selecting Transistor and Bias for Low-NoiseAmplification 1343.3 Example: Selecting Transistor and Bias for Oscillator Design 1383.4 Example: Selecting Transistor and Bias for Power Amplification 1413.4.1 Biasing HEMTs 1433.4.2 Biasing HBTs 1454 Two-Port Networks 1534.1 Introduction 1534.2 Two-Port Parameters 1544.3 S Parameters 1634.4 S Parameters from SPICE Analysis 1644.5 Mason Graphs 1654.6 Stability 1684.7 Power Gains, Voltage Gain, and Current Gain 1714.7.1 Power Gain 1714.7.2 Voltage Gain and Current Gain 1774.7.3 Current Gain 1784.8 Three-Ports 1794.9 Derivation of Transducer Power Gain 1824.10 Differential S Parameters 1844.10.1 Measurements 1864.10.2 Example 1874.11 Twisted-Wire Pair Lines 1874.12 Low-Noise and High-Power Amplifier Design 1904.13 Low-Noise Amplifier Design Examples 1935 Impedance Matching 2095.1 Introduction 2095.2 Smith Charts and Matching 2095.3 Impedance Matching Networks 217CONTENTS vii5.4 Single-Element Matching 2175.5 Two-Element Matching 2195.6 Matching Networks Using Lumped Elements 2205.7 Matching Networks Using Distributed Elements 2215.7.1 Twisted-Wire Pair Transformers 2215.7.2 Transmission Line Transformers 2235.7.3 Tapered Transmission Lines 2245.8 Bandwidth Constraints for Matching Networks 2256 Microwave Filters 2416.1 Introduction 2416.2 Low-Pass Prototype Filter Design 2426.2.1 Butterworth Response 2426.2.2 Chebyshev Response 2456.3 Transformations 2476.3.1 Low-Pass Filters: Frequency and Impedance Scaling 2476.3.2 High-Pass Filters 2506.3.3 Bandpass Filters 2516.3.4 Narrow-Band Bandpass Filters 2556.3.5 Band-Stop Filters 2596.4 Transmission Line Filters 2606.4.1 Semilumped Low-Pass Filters 2636.4.2 Richards Transformation 2666.5 Exact Designs and CAD Tools 2746.6 Real-Life Filters 2756.6.1 Lumped Elements 2756.6.2 Transmission Line Elements 2756.6.3 Cavity Resonators 2756.6.4 Coaxial Dielectric Resonators 2766.6.5 Thin-Film Bulk-Wave Acoustic Resonator (FBAR) 2767 Noise in Linear and Nonlinear Two-Ports 2817.1 Introduction 2817.2 Signal-to-Noise Ratio 2837.3 Noise Figure Measurements 2857.4 Noise Parameters and Noise Correlation Matrix 2867.4.1 Correlation Matrix 2877.4.2 Method of Combining Two-Port Matrix 2887.4.3 Noise Transformation Using the [ABCD] NoiseCorrelation Matrices 2887.4.4 Relation Between the Noise Parameter and [CA] 289viii CONTENTS7.4.5 Representation of the ABCD Correlation Matrix inTerms of Noise Parameters [13]: 2907.4.6 Noise Correlation Matrix Transformations 2917.4.7 Matrix Definitions of Series and Shunt Element 2927.4.8 Transferring All Noise Sources to the Input 2927.4.9 Transformation of the Noise Sources 2947.4.10 ABCD Parameters for CE, CC, and CB Configurations 2947.5 Noisy Two-Port Description 2957.6 Noise Figure of Cascaded Networks 3017.7 Inuence of External Parasitic Elements 3037.8 Noise Circles 3057.9 Noise Correlation in Linear Two-Ports Using CorrelationMatrices 3097.10 Noise Figure Test Equipment 3127.11 How to Determine Noise Parameters 3137.12 Noise in Nonlinear Circuits 3147.12.1 Noise sources in the nonlinear domain 3167.13 Transistor Noise Modeling 3197.13.1 Noise modeling of bipolar and heterobipolar transistors 3207.13.2 Noise Modeling of Field-effect Transistors 3327.14 Bibliography 3428 Small- and Large-Signal Amplifier Design 3478.1 Introduction 3478.2 Single-Stage Amplifier Design 3498.2.1 High Gain 3498.2.2 Maximum Available Gain and Unilateral Gain 3508.2.3 Low-Noise Amplifier 3578.2.4 High-Power Amplifier 3598.2.5 Broadband Amplifier 3608.2.6 Feedback Amplifier 3628.2.7 Cascode Amplifier 3648.2.8 Multistage Amplifier 3708.2.9 Distributed Amplifier and Matrix Amplifier 3718.2.10 Millimeter-Wave Amplifiers 3768.3 Frequency Multipliers 3768.3.1 Introduction 3768.3.2 Passive Frequency Multiplication 3778.3.3 Active Frequency Multiplication 3788.4 Design Example of 1.9-GHz PCS and 2.1-GHz W-CDMAAmplifiers 3808.5 Stability Analysis and Limitations 384CONTENTS ix8.6 Problems 3919 Power Amplifier Design 3939.1 Introduction 3939.2 Characterizing transistors for power-amplifier design 3969.3 Single-Stage Power Amplifier Design 4029.4 Multistage Design 4089.5 Power-Distributed Amplifiers 4179.6 Class of Operation 4339.6.1 Optimizing Conduction Angle 4379.6.2 Optimizing Harmonic Termination 4469.6.3 Analog Switch-Mode Amplifiers 4519.7 Efficiency and Linearity Enhancement PA Topologies 4569.7.1 The Doherty Amplifier 4569.7.2 Outphasing Amplifiers 4609.7.3 Kahn EER and Envelope Tracking Amplifiers 4629.8 Digital Microwave Power Amplifiers (class-D/S) 4739.8.1 Voltage-Mode Topology 4759.8.2 Current-Mode Topology 4809.9 Power Amplifier Stability 48710 Oscillator Design 49910.1 Introduction 49910.2 Compressed Smith Chart 50210.3 Series or Parallel Resonance 50610.4 Resonators 50710.4.1 Dielectric Resonators 50810.4.2 YIG Resonators 51210.4.3 Varactor Resonators 51710.4.4 Ceramic Resonators 51810.4.5 Coupled Resonator 51910.4.6 Resonator Measurements 52510.5 Two-Port Oscillator Design 53110.6 Negative Resistance From Transistor Model 53510.7 Oscillator Q and Output Power 54710.8 Noise in Oscillators: Linear Approach 55010.8.1 Leeson's Oscillator Model 55010.8.2 Low-Noise Design 55710.9 Analytic Approach to Optimum Oscillator Design UsingS Parameters 56810.10 Nonlinear Active Models for Oscillators 583x CONTENTS10.10.1 Diodes with Hyperabrupt Junction 58410.10.2 Silicon Versus Gallium Arsenide 58510.10.3 Expressions for gm and Gd 58710.10.4 Nonlinear Expressions for Cgs, Ggf , and Ri 59010.10.5 Analytic Simulation of I{V Characteristics 59110.10.6 Equivalent-Circuit Derivation 59110.10.7 Determination of Oscillation Conditions 59110.10.8 Nonlinear Analysis 59410.10.9 Conclusion 59610.11 Oscillator Design Using Nonlinear Cad Tools 59610.11.1 Parameter Extraction Method 60010.11.2 Example of Nonlinear Design Methodology: 4-GHzOscillator{ Amplifier 60410.11.3 Conclusion 61010.12 Microwave Oscillators Performance 61010.13 Design of an Oscillator Using Large-Signal Y Parameters 61410.14 Example for Large-Signal Design Based on Bessel Functions 61710.15 Design Example for Best Phase Noise and Good Output Power 62210.16 A Design Example for a 350MHz fixed frequency ColpittsOscillator 63010.16.1 1/f Noise: 64410.17 2400 MHz MOSFET-Based Push{Pull Oscillator 64510.17.1 Design Equations 64710.17.2 Design Calculations 65210.17.3 Phase Noise 65310.18 CAD Solution for Calculating Phase Noise in Oscillators 65610.18.1 General Analysis of Noise Due to Modulation andConversion in Oscillators 65610.18.2 Modulation by a Sinusoidal Signal 65710.18.3 Modulation by a Noise Signal 65810.18.4 Oscillator Noise Models 65910.18.5 Modulation and Conversion Noise 66110.18.6 Nonlinear Approach for Computation of Noise Analysisof Oscillator Circuits 66110.18.7 Noise Generation in Oscillators 66310.18.8 Frequency Conversion Approach 66310.18.9 Conversion Noise Analysis 66410.18.10Noise Performance Index Due to Frequency Conversion 66410.18.11Modulation Noise Analysis 66610.18.12Noise Performance Index Due to Contribution ofModulation Noise 66810.18.13PM{AM Correlation Coefficient 669CONTENTS xi10.19 Phase Noise Measurement 67010.19.1 Phase Noise Measurement Techniques 67110.20 Back to Conventional Phase Noise Measurement System(Hewlett-Packard) 68410.21 State-of-the-art 68810.21.1 ANALOG SIGNAL PATH 68910.21.2 DIGITAL SIGNAL PATH 69010.21.3 PULSED PHASE NOISE MEASUREMENT 69210.21.4 CROSS-CORRELATION 69310.22 INSTRUMENT PERFORMANCE 69410.23 Noise in Circuits and Semiconductors [10.87, 10.88, 10.99] 69510.24 Validation Circuits 69910.24.1 1000-MHz Ceramic Resonator Oscillator (CRO) 69910.24.2 4100-MHz Oscillator with Transmission Line Resonators 70310.24.3 2000-MHz GaAs FET-Based Oscillator 70710.25 Analytical Approach For Designing Efficient Microwave FETand Bipolar Oscillators (Optimum Power) 70910.25.1 Series Feedback (MESFET) 70910.25.2 Parallel Feedback (MESFET) 71410.25.3 Series Feedback (Bipolar) 71610.25.4 Parallel Feedback (Bipolar) 71910.25.5 An FET Example 72010.25.6 Simulated Results 72910.25.7 Synthesizers 73210.25.8 Self-Oscillating Mixer 73210.26 Introduction 73510.27 Large signal noise analysis 73510.28 Quantifying Phase Noise 74310.29 Summary 74511 Frequency Synthesizer 76911.1 Building block of synthesizer 77111.1.1 Voltage controlled oscillator 77111.1.2 Reference oscillator 77111.1.3 Frequency divider 77111.1.4 Phase-Frequency Comparators 77411.1.5 Loop Filters - Filters for Phase Detectors ProvidingVoltage Output 77911.1.6 Example 78411.2 Important Characteristics of Synthesizers 78711.2.1 Frequency Range 78711.2.2 Phase Noise 788xii CONTENTS11.2.3 Spurious Response 78811.2.4 Transient Behavior of Digital Loops Using Tri-StatePhase Detectors 78811.3 Practical Circuits 79611.4 The Fractional-N Principle 79911.4.1 Example: 80211.4.2 Spur-Suppression Techniques 80511.5 Digital Direct Frequency Synthesizer 80811.5.1 DDS advantages 81112 Microwave Mixer Design 81512.1 Introduction 81512.2 Diode Mixer Theory 82312.3 Single-Diode Mixers 83612.4 Single-Balanced Mixers 84712.5 Double-Balanced Mixers 86312.6 FET Mixer Theory 89112.7 Balanced FET Mixers 91512.8 Resistive (Reective) FET Mixers 93012.9 Special Mixer Circuits 93812.10 Mixer Noise 95012.10.1 Mixer Noise Analysis (MOSFET) 95012.10.2 Noise in resistive GaAs HEMT mixers1 95813 RF Switches and Attenuators 97113.1 pin Diodes 97113.2 pin Diode Switches 97413.3 pin Diode Attenuators 98513.4 FET Switches 98714 Simulation of Microwave Circuits 99514.1 Introduction 99514.2 Design Types 99714.2.1 Printed Circuit Board 99714.2.2 Monolithic Microwave Integrated Circuits 99814.3 Design Entry 99914.3.1 Schematic Capture 99914.3.2 Board and MMIC Layout 10001Based on Michael Margraf, "Niederfrequenz-Rauschen und Intermodulationen von resistiven FET-Mischern,"PhD dissertation at Berlin Institute of Technology, 2004 (in German) [12]. Figures reprinted with permission.The mixer noise modeling approach was also published in [13, 14, 15].CONTENTS xiii14.4 Linear Circuit Simulation 100114.4.1 Small-Signal AC and S-parameter Simulation 100114.4.2 Example: Microwave Filter, Schematic Based 100414.5 Nonlinear Simulation 100414.5.1 Newton's Method 100614.5.2 Transistor Modeling 100714.5.3 Transient Simulation 100814.5.4 Example: Transient 101014.5.5 Harmonic Balance Simulation 101214.5.6 Example: Harmonic Balance, One-tone Amplifier 101614.5.7 Example: Harmonic Balance, Two-tone Amplifier 101714.5.8 Envelope Simulation 101914.5.9 Example: Envelope, Modulated Amplifier 102314.5.10 Mixing Circuit and Thermal Simulation 102414.5.11 Example: Electrothermal 102714.6 Electromagnetic Simulation 102914.6.1 Method of Moments 103114.6.2 Finite Element Method 103114.6.3 Finite Difference Time Domain 103214.6.4 Performing an EM Simulation 103214.6.5 Example: Microwave Filter, EM Based 103414.7 Design for Manufacturing 103414.7.1 Circuit Optimization 103514.7.2 Example: Optimization 103714.7.3 Component Variation 104114.7.4 Monte Carlo Analysis 104214.7.5 Example: Monte Carlo Analysis 104414.7.6 Yield Analysis and Yield Optimization 104714.8 Oscillator Design and Simulation Example 104814.8.1 STW Delay Line 104814.8.2 Behavioral Simulation 105014.8.3 Choosing an Amplifier 105014.8.4 DC Feed Design 105314.8.5 Wilkinson Divider Design 105314.8.6 Matching and Linear Oscillator Analysis 105314.8.7 Optimization of Loop Gain and Phase 105714.8.8 Nonlinear Oscillator Analysis 105714.8.9 1/f Noise Characterization 105914.8.10 Phase Noise Simulation 106614.8.11 Oscillator Start-up Time 106914.8.12 Layout EM Cosimulation 106914.8.13 Oscillator Design Summary 1070xiv CONTENTS14.9 Conclusion 1071References 1073Appendix A: Derivations for Unilateral GainSection 1075Appendix B: Vector Representation of Two-Tone Intermodulation Products 1077Introduction 1077Single-Tone Analysis 1078Two-Tone Analysis 1080Bias-Induced Distortion 1086Summary 1089Single-Tone Volterra Series Expansion 1090Fundamental Term 1091dc Term 1091Nonlinear Parallel RC Network 1092Acknowledgments 1094Bibliography 1095Appendix C: Passive Microwave Elements 1097Lumped Elements 1098Distributed Elements 1100Discontinuities 1107Monolithic Elements 1110Special-Purpose Elements 1113Index 1119

Foreword by David Leeson.Preface.1. RF/Microwave Systems.2. Lumped and Distributed Elements.3. Active Devices.4. Two-Port Networks.5. Impedance Matching.6. Microwave Filters.7. Noise in Linear Two-Ports.8. Small and Large-Signal Amplifier Design.9. Power Amplifier Design.10. Oscillator Design.11. Microwave Mixer Design.12. RF Switches and Attenuators.13. Microwave CAD.Appendix A: Gummel-Poon Bipolar Transistor Model.Appendix B: Level 3 MOSFET Model.Appendix C: Noise Parameters of GaAs MESFETs.Appendix D: Derivations for Unilateral Gain Section.Appendix E: Vector Representation of 2 Tone Intermodulation Products.