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When the ?rst edition ofBasic Semiconductor Physics was published in 2001, there were already many books, review papers and scienti?c journals de- ing with various aspects of semiconductor physics. Since many of them were dealing with special aspects of newly observed phenomena or with very f- damental physics, it was very di?cult to understand the advanced physics of semiconductors without the detailed knowledge of semiconductor physics. For this purpose the author published the ?rst edition for the readers who are involved with semiconductor research and development. Basic Semiconductor…mehr

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Produktbeschreibung
When the ?rst edition ofBasic Semiconductor Physics was published in 2001, there were already many books, review papers and scienti?c journals de- ing with various aspects of semiconductor physics. Since many of them were dealing with special aspects of newly observed phenomena or with very f- damental physics, it was very di?cult to understand the advanced physics of semiconductors without the detailed knowledge of semiconductor physics. For this purpose the author published the ?rst edition for the readers who are involved with semiconductor research and development. Basic Semiconductor Physics deals with details of energy band structures, e?ective mass eq- tion and k·p perturbation, and then describes very important phenomena in semiconductors such as optical, transport, magnetoresistance, and quantum phenomena. Some of my friends wrote to me that the textbook is not only basic but advanced, and that the title of the book does not re?ect the c- tents. However, I am still convinced that the title is appropriate, because the advanced physics of semiconductor may be understood with the knowledge of the fundamental physics. In addition new and advanced phenomena - served in semiconductors at an early time are becoming well-known and thus classi?ed in basic physics. After the publication of the ?rst edition, many typographical errors have been pointed out and the corrected version was published in 2006. The p- lisher and my friends persuade me to revise the book adding new chapters, keeping the subject at the appropriate level.

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

  • Produktdetails
  • Verlag: Springer-Verlag GmbH
  • Erscheinungstermin: 09.12.2009
  • Englisch
  • ISBN-13: 9783642033032
  • Artikelnr.: 37367240
Autorenporträt
Chihiro Hamaguchi, University of Osaka, Japan
Inhaltsangabe
Energy Band Structures of Semiconductors.- Cyclotron Resonance and Energy Band Structures.- Wannier Function and Effective Mass Approximation.- Optical Properties 1.- Optical Properties 2.- Electron - Phonon Interaction and Electron Transport.- Magnetotransport Phenomena.- Quantum Structures.- Light Emission and Laser.

1 Energy Band Structures of Semiconductors . . . . . . . . . . . . . . . 1 1.1 Free-Electron Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Bloch Theorem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Nearly Free Electron Approximation . . . . . . . . . . . . . . . . . . . . . . 5 1.4 Reduced Zone Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.5 Free{Electron Bands (Empty{Lattice Bands) . . . . . . . . . . . . . . 9 1.5.1 First Brillouin Zone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 1.5.2 Reciprocal Lattice Vectors of fcc Crystal . . . . . . . . . . . . 11 1.5.3 Free Electron Bands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.6 Pseudopotential Method. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 1.6.1 Local Pseudopotential Theo ry . . . . . . . . . . . . . . . . . . . . . 15 1.6.2 Pseudopotential Form Factors . . . . . . . . . . . . . . . . . . . . . . 19 1.6.3 Nonlocal Pseudopotential Theory . . . . . . . . . . . . . . . . . . . 21 1.6.4 Energy Band Calculation by Local Pseudopotential Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 1.6.5 Spin{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 1.6.6 Energy Band Calculations by Nonlocal Pseudopotential Method with Spin{orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 1.7 k _ p Perturbation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 1.7.1 k _ p Hamiltonian. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 1.7.2 Derivation of the k _ p Parameters . . . . . . . . . . . . . . . . . . 40 1.7.3 15{band k _ p Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 1.7.4 Antisymmetric Potentials for Zinc Blende Crystals . . . 50 1.7.5 Spin{orbit Interaction Hamiltonian . . . . . . . . . . . . . . . . 51 1.7.6 30{band k _ p Method with the Spin{Orbit Interaction 53 1.8 Density of States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2 Cyclotron Resonance and Energy Band Structures . . . . . . . 61 2.1 Cyclotron Resonance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 2.2 Analysis of Valence Bands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 IX X Contents 2.3 Spin{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 2.4 Non-parabolicity of the Conduction Band. . . . . . . . . . . . . . . . . . 81 2.5 Electron Motion in a Magnetic Field and Landau Levels . . . . . 85 2.5.1 Landau Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 2.5.2 Density of States and Inter Landau Level Transition . . 90 2.5.3 Landau Levels of a Non-parabolic Band . . . . . . . . . . . . . 92 2.5.4 Landau Levels of the Valence Bands . . . . . . . . . . . . . . . . 96 2.5.5 Magneto{optical Absorption . . . . . . . . . . . . . . . . . . . . . . . 101 2.6 Luttinger Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 2.7 Luttinger Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 3 Wannier Function and Effective Mass Approximation . . . . . 115 3.1 Wannier Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 3.2 Effective-mass Approximation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.3 Shallow Impurity Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 3.4 Impurity Levels in Ge and Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 3.4.1 Valley{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . 127 3.4.2 C
Rezensionen
"In conclusion, I would say that this book is a nice presentation of today's basic principles needed for a proper starting in the field of modern semiconductor physics." -- Physicalia