Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies - Fulde, Michael
89,99 €
versandkostenfrei*

inkl. MwSt.
Versandfertig in 6-10 Tagen
Bequeme Ratenzahlung möglich!
ab 4,39 € monatlich
45 °P sammeln

    Broschiertes Buch

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.…mehr

Produktbeschreibung
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
  • Produktdetails
  • Springer Series in Advanced Microelectronics .28
  • Verlag: Springer Netherlands
  • 2010
  • Seitenzahl: 140
  • Erscheinungstermin: 14. März 2012
  • Englisch
  • Abmessung: 235mm x 155mm x 7mm
  • Gewicht: 224g
  • ISBN-13: 9789400730830
  • ISBN-10: 9400730837
  • Artikelnr.: 34557269
Inhaltsangabe
Preface. Danksagung.
1 Introduction. 1.1 Motivation. 1.2 Scaling Fundamentals. 1.3 Variability from Analog and Mixed-Signal Perspective.
2 Analog Properties of Multi-Gate MOSFETs. 2.1 Introduction to Recent FinFET Technology. 2.2 DC Characteristics. 2.3 Analog and RF Characteristics. 2.4 Matching Behavior. 2.5 Charge-Trapping. 2.6 Self-Heating.
3 High-k Related Design Issues. 3.1 Flicker Noise. 3.2 Transient VT Variations and Hysteresis Effects.
4 Multi-Gate Related Design Aspects. 4.1 Biasing Circuits. 4.2 Operational Amplifiers. 4.3 Bandgap Reference Circuits. 4.4 D/A Converter. 4.5 Phase-Locked-Loop Circuit. 4.6 RF Building Blocks. 4.7 Self-Heating. 4.8 Selective Fin Width Tuning.
5 Multi-Gate Tunneling FETs. 5.1 Principle of Operation and Implementation of MuGTFETs. 5.2 Measurement Results. 5.3 Device Simulation. 5.4 MuGTFET Reference Circuit.
6 Conclusions and Outlook.
Symbols and Abbreviations. References.