Optical Testing of Semiconductor Devices under High Energy Pulses - Dubec, Viktor
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For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional…mehr

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Produktbeschreibung
For optimisation of devices and verification of device simulation models the knowledge of heat dissipation and of free carrier concentration in the device is essential. Non-destructive optical methods based on monitoring of the refractive index, absorption or light emission have previously been developed for investigation of transient temperature or free carrier changes. However, these methods suffer either from small spatial or time resolution. Therefore two testing techniques based on transient interferometric mapping have been developed within this thesis: a two-dimensional multiple-time-instant single-shot technique and a two-beam technique with sub-nanosecond time resolution.
Autorenporträt
Viktor Dubec was born in 1977 in Bratislava, Slovakia. He received his Mag. degree in year 2000 at the Department of Optics and Optoelectronics, Comenius University Bratislava. In 2001 he joined the group for investigation of ESD protection devices at the Institute for Solid State Electronics, Vienna University of Technology, Austria.