Chenming Hu, Sourabh Khandelwal, Yogesh Singh Chauhan, Thomas Mckay, Josef Watts, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design (eBook, ePUB)

• Format: ePub

Produktbeschreibung

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.

The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

• Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model
• Explains the complex operation of the FDSOI device and its use of two independent control inputs
• Addresses the parameter extraction challenges for those using this model

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Produktdetails

• Verlag: Elsevier Science & Techn.
• Seitenzahl: 258
• Erscheinungstermin: 21. Mai 2019
• Englisch
• ISBN-13: 9780081024027
• Artikelnr.: 56903674

Autorenporträt

Chenming Hu is Distinguished Chair Professor Emeritus at UC Berkeley. He was the Chief Technology Officer of TSMC and founder of Celestry Design Technologies. He is best known for developing the revolutionary 3D transistor FinFET that powers semiconductor chips beyond 20nm. He also led the development of BSIM-- the industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. His honors include the Asian American Engineer of the Year Award, IEEE Andrew Grove Award and Solid Circuits Award as well as Nishizawa Medal, and UC Berkeley's highest honor for teaching-- the Berkeley Distinguished Teaching Award.

Inhaltsangabe

1. Fully Depleted Silicon on Oxide Transistor and Compact Model 2. Core Model for Independent Multigate MOSFETs 3. Channel Current Model With Real Device Effects in BSIM-IMG 4. Leakage Current and Thermal Effects 5. Model for Terminal Charges and Capacitances in BSIM-IMG6. Parameter Extraction With BSIM-IMG Compact Model 7. Testing BSIM-IMG Model Quality 8. High-Frequency and Noise Models in BSIM-IMG