Giovanni Campardo, Rino Micheloni, David Novosel

VLSI-Design of Non-Volatile Memories

• Gebundenes Buch

Produktbeschreibung

VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.

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The electronics and information technology revolution continues, but it is a critical time in the development of technology. Once again, we stand on the brink of a new era where emerging research will yield exciting applications and products destined to transform and enrich our daily lives! The potential is staggering and the ultimate impact is unimaginable, considering the continuing marriage of te- nology with fields such as medicine, communications and entertainment, to name only a few. But who will actually be responsible for transforming these potential new pr- ucts into reality? The answer, of course, is today's (and tomorrow's) design en- neers! The design of integrated circuits today remains an essential discipline in s- port of technological progress, and the authors of this book have taken a giant step forward in the development of a practice-oriented treatise for design engineers who are interested in the practical, industry-driven world of integrated circuit - sign.

Produktdetails

• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 10826270, 978-3-540-20198-4
• 2005
• Seitenzahl: 612
• Erscheinungstermin: 18. Januar 2005
• Englisch
• Abmessung: 241mm x 160mm x 38mm
• Gewicht: 1014g
• ISBN-13: 9783540201984
• ISBN-10: 354020198X
• Artikelnr.: 13294240

Autorenporträt

Giovanni Campardo, STMicroelectronics, Agrate Brianza, Italy / R. Micheloni, STMicroelectronics, Agrate Brianza, Italy / Daniel Novosel, INTELLIGENT MICRO DESIGN, Inc., West Middlesex, PA, USA

Inhaltsangabe

Non-Volatile Memory Design.- Process Aspects.- The MOSFET Transistor and the Memory Cell.- Passive Components.- Fundamental Circuit Blocks.- Layout.- The Organization of the Memory Array.- The Input Buffer.- Decoders.- Boost.- Synchronization Circuits.- Reading Circuits.- Multilevel Read.- Program and Erase Algorithms.- Circuits Used in Program and Erase Operations.- High-Voltage Management System.- Program and Erase Controller.- Redundancy and Error Correction Codes.- The Output Buffer.- Test Modes.- ESD & Latch-Up.- From Specification Analysis to Floorplan Definition.- Photo Album.