Reliability Wearout Mechanisms in Advanced CMOS Technologies (eBook, PDF)
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Reliability Wearout Mechanisms in Advanced CMOS Technologies (eBook, PDF)
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This invaluable resource tells the complete story of failure mechanisms--from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.…mehr
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- Produktdetails
- Verlag: John Wiley & Sons
- Seitenzahl: 640
- Erscheinungstermin: 4. November 2009
- Englisch
- ISBN-13: 9780470455258
- Artikelnr.: 37292371
- Verlag: John Wiley & Sons
- Seitenzahl: 640
- Erscheinungstermin: 4. November 2009
- Englisch
- ISBN-13: 9780470455258
- Artikelnr.: 37292371
Lifetime and Acceleration Concepts. 1.3 Mechanism Types. 1.4 Reliability
Statistics. 1.5 Chi-Square and Student t Distributions. 1.6 Application. 2
DIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY (Ernest Y. Wu,
Rolf-Peter Vollertsen, and Jordi Sune). 2.1 Introduction. 2.2 Fundamentals
of Insulator Physics and Characterization. 2.3 Measurement of Dielectric
Reliability. 2.4 Fundamentals of Dielectric Breakdown Statistics. 2.5
Summary and Future Trends. 3 DIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS
AND EXPERIMENTS (Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune). 3.1
Introduction. 3.2 Physics of Degradation and Breakdown. 3.3 Physical Models
for Oxide Degradation and Breakdown. 3.4 Experimental Results of Oxide
Breakdown. 3.5 Post-Breakdown Phenomena. 4 NEGATIVE BIAS TEMPERATURE
INSTABILITIES IN pMOSFET DEVICES (Giuseppe LaRosa). 4.1 Introduction. 4.2
Considerations on NBTI Stress Configurations. 4.3 Appropriate NBTI Stress
Bias Dependence. 4.4 Nature of the NBTI Damage. 4.5 Impact of the NBTI
Damage to Key pMOSFET Transistor Parameters. 4.6 Physical Mechanisms
Contributing to the NBTI Damage. 4.7 Key Experimental Observations on the
NBTI Damage. 4.8 Nit Generation by Reaction-Diffusion (R-D) Processes. 4.9
Hole Trapping Modeling. 4.10 NBTI Dependence on CMOS Processes. 4.11 NBTI
Dependence on Area Scaling. 4.12 Overview of Key NBTI Features. 5 HOT
CARRIERS (Stewart E. Rauch, III). 5.1 Introduction. 5.2 Hot Carriers:
Physical Generation and Injection Mechanisms. 5.3 Hot Carrier Damage
Mechanisms. 5.4 HC Impact to MOSFET Characteristics. 5.5 Hot Carrier Shift
Models. 6 STRESS-INDUCED VOIDING (Timothy D. Sullivan). 6.1 Introduction.
6.2 Theory and Model. 6.3 Role of the Overlying Dielectric. 6.4 Summary of
Voiding in Al Metallizations 6.5 Stress Voiding in Cu Interconnects. 6.6
Concluding Remarks. 7 ELECTROMIGRATION (Timothy D. Sullivan). 7.1
Introduction. 7.2 Metallization Failure. 7.3 Electromigration. 7.4 General
Approach to Electromigration Reliability. 7.5 Thermal Considerations for
Electromigration. 7.6 Closing Remarks. Index.
Lifetime and Acceleration Concepts. 1.3 Mechanism Types. 1.4 Reliability
Statistics. 1.5 Chi-Square and Student t Distributions. 1.6 Application. 2
DIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY (Ernest Y. Wu,
Rolf-Peter Vollertsen, and Jordi Sune). 2.1 Introduction. 2.2 Fundamentals
of Insulator Physics and Characterization. 2.3 Measurement of Dielectric
Reliability. 2.4 Fundamentals of Dielectric Breakdown Statistics. 2.5
Summary and Future Trends. 3 DIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS
AND EXPERIMENTS (Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune). 3.1
Introduction. 3.2 Physics of Degradation and Breakdown. 3.3 Physical Models
for Oxide Degradation and Breakdown. 3.4 Experimental Results of Oxide
Breakdown. 3.5 Post-Breakdown Phenomena. 4 NEGATIVE BIAS TEMPERATURE
INSTABILITIES IN pMOSFET DEVICES (Giuseppe LaRosa). 4.1 Introduction. 4.2
Considerations on NBTI Stress Configurations. 4.3 Appropriate NBTI Stress
Bias Dependence. 4.4 Nature of the NBTI Damage. 4.5 Impact of the NBTI
Damage to Key pMOSFET Transistor Parameters. 4.6 Physical Mechanisms
Contributing to the NBTI Damage. 4.7 Key Experimental Observations on the
NBTI Damage. 4.8 Nit Generation by Reaction-Diffusion (R-D) Processes. 4.9
Hole Trapping Modeling. 4.10 NBTI Dependence on CMOS Processes. 4.11 NBTI
Dependence on Area Scaling. 4.12 Overview of Key NBTI Features. 5 HOT
CARRIERS (Stewart E. Rauch, III). 5.1 Introduction. 5.2 Hot Carriers:
Physical Generation and Injection Mechanisms. 5.3 Hot Carrier Damage
Mechanisms. 5.4 HC Impact to MOSFET Characteristics. 5.5 Hot Carrier Shift
Models. 6 STRESS-INDUCED VOIDING (Timothy D. Sullivan). 6.1 Introduction.
6.2 Theory and Model. 6.3 Role of the Overlying Dielectric. 6.4 Summary of
Voiding in Al Metallizations 6.5 Stress Voiding in Cu Interconnects. 6.6
Concluding Remarks. 7 ELECTROMIGRATION (Timothy D. Sullivan). 7.1
Introduction. 7.2 Metallization Failure. 7.3 Electromigration. 7.4 General
Approach to Electromigration Reliability. 7.5 Thermal Considerations for
Electromigration. 7.6 Closing Remarks. Index.