Denny D. Tang, Chi-Feng Pai

Magnetic Memory Technology

Spin-Transfer-Torque Mram and Beyond

• Gebundenes Buch

Produktbeschreibung

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE

Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications.

This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization.

Among other topics, readers will benefit from the book's discussions of:
_ An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts
_ An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization
_ A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model
_ Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect
_ Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others

Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

Produktdetails

• Verlag: Wiley & Sons / Wiley-IEEE Press
• Artikelnr. des Verlages: 1W119562230
• 1. Auflage
• Seitenzahl: 352
• Erscheinungstermin: 7. Januar 2021
• Englisch
• Abmessung: 221mm x 147mm x 25mm
• Gewicht: 630g
• ISBN-13: 9781119562238
• ISBN-10: 1119562236
• Artikelnr.: 59515164

Autorenporträt

DENNY D. TANG, PHD, has been with IBM Watson and later Almaden Research Center, TSMC, and held a position as MRAM Architect in Western Digital. He Is a Live Fellow of IEEE, Fellow of TSMC Academy, a co-author of Magnetic Memory, Fundamentals and Technology, (2010). CHI-FENG PAI, PHD, is now an Associate Professor of National Taiwan University (NTU). He is the recipient of Young Researcher Award of Asian Union of Magnetic Society (AUMS), Young Researcher Fellowship of Ministry of Science and Technology (MOST, Taiwan), and Young Researcher Award of Taiwan Semiconductor Industry Association (TSIA).

Inhaltsangabe

Preface xi

Author Biographies xiv

List of Cited Tables and Figures xvi

1 Basic Electromagnetism 1

1.1 Introduction 1

1.2 Magnetic Force, Pole, Field, and Dipole 1

1.3 Magnetic Dipole Moment, Torque, and Energy 3

1.4 Magnetic Flux and Magnetic Induction 5

1.5 Ampère's Circuital Law, Biot-Savart Law, and Magnetic Field from Magnetic Material 6

1.5.1 Ampère's Circuital Law 6

1.5.2 Biot-Savart's Law 8

1.5.3 Magnetic Field from Magnetic Material 10

1.6 Equations, cgs-SI Unit Conversion Tables 11

Homework 13

References 17

2 Magnetism and Magnetic Materials 19

2.1 Introduction 19

2.2 Origin of Magnetization 19

2.2.1 From Ampère to Einstein 19

2.2.2 Precession 21

2.2.3 Electron Spin 22

2.2.4 Spin-Orbit Interaction 24

2.2.5 Hund's Rules 25

2.3 Classification of Magnetisms 28

2.3.1 Diamagnetism 30

2.3.2 Paramagnetism 30

2.3.3 Ferromagnetism 34

2.3.4 Antiferromagnetism 37

2.3.5 Ferrimagnetism 40

2.4 Exchange Interactions 42

2.4.1 Direct Exchange 43

2.4.2 Indirect Exchange: Superexchange 45

2.4.3 Indirect Exchange: RKKY Interaction 46

2.4.4 Dzyaloshinskii-Moriya Interaction (DMI) 48

2.5 Magnetization in Magnetic Metals and Oxides 49

2.5.1 Slater-Pauling Curve 49

2.5.2 Rigid Band Model 50

2.5.3 Iron Oxides and Iron Garnets 51

2.6 Phenomenology of Magnetic Anisotropy 51

2.6.1 Uniaxial Anisotropy 52

2.6.2 Cubic Anisotropy 53

2.7 Origins of Magnetic Anisotropy 54

2.7.1 Shape Anisotropy 55

2.7.2 Magnetocrystalline Anisotropy (MCA) 56

2.7.3 Perpendicular Magnetic Anisotropy (PMA) 57

2.8 Magnetic Domain and Domain Walls 57

2.8.1 Domain Wall 58

2.8.2 Single Domain and Superparamagnetism 59

Homework 60

References 64

3 Magnetic Thin Films 67

3.1 Introduction 67

3.2 Magnetic Thin Film Growth 67

3.2.1 Sputter Deposition 68

3.2.2 Molecular Beam Epitaxy (MBE) 71

3.3 Magnetic Thin Film Characterization 72

3.3.1 Vibrating-Sample Magnetometer (VSM) 73

3.3.2 Magneto-Optical Kerr Effect (MOKE) 74

References 76

4 Magnetoresistance Effects 77

4.1 Introduction 77

4.2 Anisotropic Magnetoresistance (AMR) 78

4.3 Giant Magnetoresistance (GMR) 79

4.4 Tunneling Magnetoresistance (TMR) 81

4.5 Contemporary MTJ Designs and Characterization 84

4.5.1 Perpendicular MTJ (p-MTJ) 85

4.5.2 Fully Functional p-MTJ 85

4.5.3 CIPT Approach for TMR Characterization 87

Homework 89

References 89

5 Magnetization Switching and Field MRAMs 93

5.1 Introduction 93

5.2 Magnetization Reversible Rotation and Irreversible Switching Under External Field 93

5.2.1 Magnetization Rotation Under an External Field in the Hard Axis Direction 94

5.2.2 Magnetization Rotation and Switching Under an external Field in the Easy Axis Direction 95

5.2.3 Magnetization Rotation and Switching Under Two Orthogonal External Fields 96

5.2.4 Magnetization Behavior of a Synthetic Anti-ferromagnetic Film Stack 97

5.3 Field MRAMs 99

5.3.1 MTJ of Field MRAM 100

5.3.2 Half-Select Bit Disturbance Issue 101

Homework 102

References 103

6 Spin Current and Spin Dynamics 105
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