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    Gebundenes Buch

Now in a second, updated edition, this detailed description of basic semiconductor physics covers a wide range of important phenomena in semiconductors, from the simple to the advanced, and includes an essential new chapter on semiconductor lasers.
This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of…mehr

Produktbeschreibung
Now in a second, updated edition, this detailed description of basic semiconductor physics covers a wide range of important phenomena in semiconductors, from the simple to the advanced, and includes an essential new chapter on semiconductor lasers.
This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.
  • Produktdetails
  • Verlag: Springer, Berlin
  • Artikelnr. des Verlages: 12693535
  • 2nd ed.
  • Erscheinungstermin: 9. Februar 2010
  • Englisch
  • Abmessung: 241mm x 160mm x 41mm
  • Gewicht: 1044g
  • ISBN-13: 9783642033025
  • ISBN-10: 3642033024
  • Artikelnr.: 26818056
Inhaltsangabe
Energy Band Structures of Semiconductors.- Cyclotron Resonance and Energy Band Structures.- Wannier Function and Effective Mass Approximation.- Optical Properties 1.- Optical Properties 2.- Electron - Phonon Interaction and Electron Transport.- Magnetotransport Phenomena.- Quantum Structures.- Light Emission and Laser.

1 Energy Band Structures of Semiconductors . . . . . . . . . . . . . . . 1 1.1 Free-Electron Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Bloch Theorem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Nearly Free Electron Approximation . . . . . . . . . . . . . . . . . . . . . . 5 1.4 Reduced Zone Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.5 Free{Electron Bands (Empty{Lattice Bands) . . . . . . . . . . . . . . 9 1.5.1 First Brillouin Zone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 1.5.2 Reciprocal Lattice Vectors of fcc Crystal . . . . . . . . . . . . 11 1.5.3 Free Electron Bands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.6 Pseudopotential Method. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 1.6.1 Local Pseudopotential Theo ry . . . . . . . . . . . . . . . . . . . . . 15 1.6.2 Pseudopotential Form Factors . . . . . . . . . . . . . . . . . . . . . . 19 1.6.3 Nonlocal Pseudopotential Theory . . . . . . . . . . . . . . . . . . . 21 1.6.4 Energy Band Calculation by Local Pseudopotential Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 1.6.5 Spin{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 1.6.6 Energy Band Calculations by Nonlocal Pseudopotential Method with Spin{orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 1.7 k _ p Perturbation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 1.7.1 k _ p Hamiltonian. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 1.7.2 Derivation of the k _ p Parameters . . . . . . . . . . . . . . . . . . 40 1.7.3 15{band k _ p Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 1.7.4 Antisymmetric Potentials for Zinc Blende Crystals . . . 50 1.7.5 Spin{orbit Interaction Hamiltonian . . . . . . . . . . . . . . . . 51 1.7.6 30{band k _ p Method with the Spin{Orbit Interaction 53 1.8 Density of States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2 Cyclotron Resonance and Energy Band Structures . . . . . . . 61 2.1 Cyclotron Resonance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 2.2 Analysis of Valence Bands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 IX X Contents 2.3 Spin{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 2.4 Non-parabolicity of the Conduction Band. . . . . . . . . . . . . . . . . . 81 2.5 Electron Motion in a Magnetic Field and Landau Levels . . . . . 85 2.5.1 Landau Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 2.5.2 Density of States and Inter Landau Level Transition . . 90 2.5.3 Landau Levels of a Non-parabolic Band . . . . . . . . . . . . . 92 2.5.4 Landau Levels of the Valence Bands . . . . . . . . . . . . . . . . 96 2.5.5 Magneto{optical Absorption . . . . . . . . . . . . . . . . . . . . . . . 101 2.6 Luttinger Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 2.7 Luttinger Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 3 Wannier Function and Effective Mass Approximation . . . . . 115 3.1 Wannier Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 3.2 Effective-mass Approximation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.3 Shallow Impurity Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 3.4 Impurity Levels in Ge and Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 3.4.1 Valley{Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . 127 3.4.2 C
Rezensionen
"In conclusion, I would say that this book is a nice presentation of today's basic principles needed for a proper starting in the field of modern semiconductor physics." -- Physicalia