Masanori Okuyama / Yoshihiro Ishibashi (eds.)

Ferroelectric Thin Films

Basic Properties and Device Physics for Memory Applications
Herausgegeben:Okuyama, Masanori; Ishibashi, Yoshihiro

• Gebundenes Buch

Produktbeschreibung

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Produktdetails

• Topics in Applied Physics 98
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 11308157, 978-3-540-24163-8
• 2005
• Seitenzahl: 264
• Erscheinungstermin: 22. Februar 2005
• Englisch
• Abmessung: 241mm x 160mm x 19mm
• Gewicht: 488g
• ISBN-13: 9783540241638
• ISBN-10: 3540241639
• Artikelnr.: 13941413

Autorenporträt

Masanori Okuyama, University of Osaka, Japan / Yoshihiro Ishibashi, Aichi Shukutoku University, Aichi, Japan

Inhaltsangabe

Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.