Tobias Nardmann
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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling (eBook, PDF)

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The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a num...

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