Dislocation Reactions and Stacking-Fault Energies (eBook, PDF)
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Volume is indexed by Thomson Reuters BCI (WoS).Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection M...
Volume is indexed by Thomson Reuters BCI (WoS).
Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection Moulding, Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube, Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys, Artificial Ageing Effect on 2024 Alloy, Natural Convection Flow Simulation of Nanofluid in a Square Cavity, Theoretical Models for Point Defect Calculations, Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution, Pressureless Sintering and Characterization of Al2O3-SiO2-ZrO2 Composites, Electrical Properties of Zr-Doped La2O3 Nanocrystallites, Effect of Post-Deposition Annealing on Optical Properties of Thermally-Evaporated V2O5 Thin Film, Electrical Conductivity and Phase Transition Studies in the ZrO2-CdO System, Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition, Observation of Dielectric Peaks in Glassy Se70Te20Sn10 Alloy, Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)4Cl2]5- Complex in NaCl.
Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection Moulding, Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube, Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys, Artificial Ageing Effect on 2024 Alloy, Natural Convection Flow Simulation of Nanofluid in a Square Cavity, Theoretical Models for Point Defect Calculations, Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution, Pressureless Sintering and Characterization of Al2O3-SiO2-ZrO2 Composites, Electrical Properties of Zr-Doped La2O3 Nanocrystallites, Effect of Post-Deposition Annealing on Optical Properties of Thermally-Evaporated V2O5 Thin Film, Electrical Conductivity and Phase Transition Studies in the ZrO2-CdO System, Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition, Observation of Dielectric Peaks in Glassy Se70Te20Sn10 Alloy, Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)4Cl2]5- Complex in NaCl.
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