Atomic and Electronic Properties of 2D Moiré Interfaces (eBook, PDF)
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This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (¿ < 2°) twist angles.Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to mee...
This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (¿ < 2°) twist angles.
Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle.
Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics.
Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle.
Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics.
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