Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (eBook, PDF)

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (eBook, PDF)

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Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)
Discusses an analytical model for the ionization coefficient and breakdown voltage of GNR-based FETs
Presents simulations for GNR-based FETs in terms of breakdown voltage and calculates the maximum operating voltage of the typical GNRFETs at different conditions

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