Rene Hubner
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Advanced Ta-Based Diffusion Barriers for Cu Interconnects (eBook, PDF)

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During the last few years, copper has become the standard metallization material for onchip interconnects in high-performance microprocessors. Compared to the previously used aluminum, copper shows not only a lower resistivity, but also significantly improved electromigration resistance. Copper ions, however, are very mobile in silicon and many dielectric materials under electrical and thermal bias. Thus, barrier layers are needed to prevent Cu diffusion into the insulating layers surrounding the metallic interconnects. Since Ta-based compounds are characterized by a high thermal stability, pu...

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