Utilization of the Upper Microwave
Lower Optical Spectrum by Using Vacuum Transistors in Amplifier Circuits
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There are many wide and unallocated frequency bands in the sub-terahertz frequencies (above 100 GHz) that are attractive for wideband applications. The potential of this unlicensed and unused terahertz gap in spectrum between microwaves and optical spectrum, such as huge bandwidth, very small size, very high data rates for wireless chip-tochip communication applications and less chance of external interference is a challenge not only for space applications, but also for defense applications. The weakness of the vacuum tubes (bulky and discrete) can be overcome if the vacuum tubes are made by s...
There are many wide and unallocated frequency bands in the sub-terahertz frequencies (above 100 GHz) that are attractive for wideband applications. The potential of this unlicensed and unused terahertz gap in spectrum between microwaves and optical spectrum, such as huge bandwidth, very small size, very high data rates for wireless chip-tochip communication applications and less chance of external interference is a challenge not only for space applications, but also for defense applications. The weakness of the vacuum tubes (bulky and discrete) can be overcome if the vacuum tubes are made by silicon nanofabrication technologies and the operation mechanism is shifted from thermionic emission into field emission. This diploma thesis presents the research design, using appropriate software tools, of a 150 nm vacuum-channel transistor. This transistor is operating at a frequency over the microwave spectrum and bellow the optical spectrum, thus in between 100 GHz to 3 THz, by utilizing the traditional silicon process.
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