Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications
Matthias Wietstruck
Broschiertes Buch

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

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In the dissertation "Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for sub-THz Applications", a through-silicon via (TSV) technology module is developed targeting high frequency packaging applications in the millimeter-wave and sub-THz frequency range.Based on a high-performance 130 nm SiGe BiCMOS technology, TSVs are embedded in a via-middle integration approach. The TSV process module consists of the TSV integration, a carrier wafer handling and a wafer backside process to realize a redistribution layer. A process flow was developed to realize TSV structures with various ge...