Manijeh Razeghi

Gebundenes Buch

The Mocvd Challenge

A Survey of Gainasp-Inp and Gainasp-GAAS for Photonic and Electronic Device Applications, Second Edition

Beschreibung

Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. Coverage also includes discussion of electronic devices and an overview of optoelectronic integrated circuits (OEICs).

Autor

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.

Produktdetails

• Verlag: CRC Press
• 2nd edition
• Seitenzahl: 800
• Erscheinungstermin: 17. August 2010
• Englisch
• Abmessung: 236mm x 157mm x 43mm
• Gewicht: 1220g
• ISBN-13: 9781439806982
• ISBN-10: 1439806985
• Artikelnr.: 37184658

Rezensionen

... a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
-SciTech Book News, February 2011