The Combined Effects of Radio Frequency and Gamma Irradiation on P-Channel Mosfets
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The purpose of this research was to investigate the combined effects of continuous gigahertz radio frequency signals and gamma irradiation on the threshold voltage of metal oxide semiconductor field effect transistors. The Fairchild NDS352AP, a commonly used commercial device, was irradiated by a cobalt-60 source under a +5 V bias with and without a radio frequency signal applied to the gate. The threshold voltage was measured during and after irradiation. During irradiation all devices exhibited an expected negative threshold voltage shift. The application of radio frequency to the gate resul...
The purpose of this research was to investigate the combined effects of continuous gigahertz radio frequency signals and gamma irradiation on the threshold voltage of metal oxide semiconductor field effect transistors. The Fairchild NDS352AP, a commonly used commercial device, was irradiated by a cobalt-60 source under a +5 V bias with and without a radio frequency signal applied to the gate. The threshold voltage was measured during and after irradiation. During irradiation all devices exhibited an expected negative threshold voltage shift. The application of radio frequency to the gate resulted in a 7.2% increase in the rate of change of the threshold voltage during irradiation. When RF was applied after irradiation it produced no observable change when compared to the results of samples exposed to gamma radiation alone. Few conclusions can be drawn about the effects of radio frequency on post irradiation samples owing to the long recovery time of the samples. Before irradiation the radio frequency demonstrated a 5.95% increase drain current for a given drain to source voltage during I-V measurements. The threshold voltage also increased by 1.57%. The power of the radio frequency signal was adjusted from 1 to 14 dBm with no measurable effect. This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
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