Synthesis and modifications of GaN by ion beams
Vikas Baranwal
Broschiertes Buch

Synthesis and modifications of GaN by ion beams

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The motive of the work was to study the different aspect of synthesis of GaN with different routes and modify the structural, optical, electrical and magnetic properties. GaN thin films of high epitaxial quality were deposited with ion beam assisted molecular beam epitaxy technique.As-deposited GaN films were implanted with 180 keV Co ions at different fluences. The structural properties were investigated with high resolution X-ray diffraction as well as with RBS/C technique. SQUID measurements were performed to study the magnetic properties of the implanted and annealed samples with RTA at 11...