Sub-100 nm Channel Length Organic Field Effect Transistor Fabricated by Wafer-Scale Nanoimprint Lithography
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This thesis was performed between October 2010 and October 2013 at the Institute of Semiconductors and Microsystems (IHM) of the Technische Universität Dresden (TU Dresden). The main task of this work was fabrication of short channel Organic Field Effect Transistors (OFET) using Nanoimprint Lithography (NIL). Both the UV based NIL and the thermal based NIL with wafer-scale polymer templates were applied to define OFET channel with lengths down to sub-100 nm range. A new technique termed NIL assisted Inkjet Printing (IJP) was developed that successfully achieved submicron range resolution. Fab...
This thesis was performed between October 2010 and October 2013 at the Institute of Semiconductors and Microsystems (IHM) of the Technische Universität Dresden (TU Dresden). The main task of this work was fabrication of short channel Organic Field Effect Transistors (OFET) using Nanoimprint Lithography (NIL). Both the UV based NIL and the thermal based NIL with wafer-scale polymer templates were applied to define OFET channel with lengths down to sub-100 nm range. A new technique termed NIL assisted Inkjet Printing (IJP) was developed that successfully achieved submicron range resolution. Fabricated devices were comprehensively characterized including DC and AC performances.
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