Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy
Stanley J. Ness
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Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

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During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS). Micro-Raman spectroscopy was selected because it is nondestruct...