Simulation Methodology to Compare Alternatives to Silicon Device
Yawei Jin
Broschiertes Buch

Simulation Methodology to Compare Alternatives to Silicon Device

Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?

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Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Gallium Nitride(GaN), into Fully-Depleted SOI(FDSOI) transistor architectures.Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. They can increase gate control and suppress short channel effects. To compare the feasibility of these different structures and to project the device performance, technology CAD (TCAD) simulat...