Sige Heterojunction Bipolar Transistors
Peter Ashburn
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Sige Heterojunction Bipolar Transistors

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The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. Germanium is added to silicon to form high-performance heterojunction bipolar transistors (HBTs) which can operate at higher speeds than standard silicon biploar transistors. These transistors form the enabling devices in a wide range of products for wireless and wired communications.