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Semiconductor Measurements and Instrumentation
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With semiconductor fab construction booming, a vast and growing audience awaits this updated edition of a classic reference. It incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accommodate increasingly smaller semiconductor geometries. Advanced techniques are clearly spelled out for evaluating crystal defects, impurity concentration, lifetime, film thickness, resistivity, and other important electrical properties such as mobility, hall effect, and conductivity type. Highly accurate ways of measuring hardness, stress, and vari...
With semiconductor fab construction booming, a vast and growing audience awaits this updated edition of a classic reference. It incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accommodate increasingly smaller semiconductor geometries. Advanced techniques are clearly spelled out for evaluating crystal defects, impurity concentration, lifetime, film thickness, resistivity, and other important electrical properties such as mobility, hall effect, and conductivity type. Highly accurate ways of measuring hardness, stress, and various kinds of surface contamination are included.
Table of contents:
Crystal Orientation. Crystal Defects. Impurity Concentration. Resistivity, Sheet Resistance, and contact Resistance. Mobility, conductivity type, and Ahll Effect. Carrier Lifetime. Film Thickness. Wafer-Oriented Measurements. Optical Microscopy. Scanning Electron Microscopy. Electron Probe Microanalysis. Transmission Electron Microscopy. Auger Electron Spectroscopy. Scanning Probe Microscopy. Secondary ion Mass Spectrometry. appenix 1L Safety Precautions. appendix 2: Measurement Related Acronyms and Abbreviations. Appendix 3: Conversion Tables. Appendix 4: analytical instrument Comparison and Capability. Subject Index. Name Index.
The definitive reference on semiconductor characterization tools! Semiconductor Measurements & Instrumentation, Second Edition. This fully updated edition of the classic reference incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accomodate ever-shrinking semiconductor geometries. Here, in one well-organized volume, are detialed explanations of the advanced techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). As the only guide that offers such "dual coverage" of its topic--in terms of both measurements and tools--and this timely and thorough reference is sure to be of considerable ongoing benefit to solid state and semiconductor engineers.
With semiconductor fab construction booming, a vast and growing audience awaits this updated edition of a classic reference. It incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accommodate increasingly smaller semiconductor geometries. Advanced techniques are clearly spelled out for evaluating crystal defects, impurity concentration, lifetime, film thickness, resistivity, and other important electrical properties such as mobility, hall effect, and conductivity type. Highly accurate ways of measuring hardness, stress, and various kinds of surface contamination are included.
Table of contents:
Crystal Orientation. Crystal Defects. Impurity Concentration. Resistivity, Sheet Resistance, and contact Resistance. Mobility, conductivity type, and Ahll Effect. Carrier Lifetime. Film Thickness. Wafer-Oriented Measurements. Optical Microscopy. Scanning Electron Microscopy. Electron Probe Microanalysis. Transmission Electron Microscopy. Auger Electron Spectroscopy. Scanning Probe Microscopy. Secondary ion Mass Spectrometry. appenix 1L Safety Precautions. appendix 2: Measurement Related Acronyms and Abbreviations. Appendix 3: Conversion Tables. Appendix 4: analytical instrument Comparison and Capability. Subject Index. Name Index.
The definitive reference on semiconductor characterization tools! Semiconductor Measurements & Instrumentation, Second Edition. This fully updated edition of the classic reference incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accomodate ever-shrinking semiconductor geometries. Here, in one well-organized volume, are detialed explanations of the advanced techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). As the only guide that offers such "dual coverage" of its topic--in terms of both measurements and tools--and this timely and thorough reference is sure to be of considerable ongoing benefit to solid state and semiconductor engineers.
With semiconductor fab construction booming, a vast and growing audience awaits this updated edition of a classic reference. It incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accommodate increasingly smaller semiconductor geometries. Advanced techniques are clearly spelled out for evaluating crystal defects, impurity concentration, lifetime, film thickness, resistivity, and other important electrical properties such as mobility, hall effect, and conductivity type. Highly accurate ways of measuring hardness, stress, and various kinds of surface contamination are included.