Resistive Random Access Memory
Arnab Hazra
Broschiertes Buch

Resistive Random Access Memory

The New Generation High Speed Switching Non-Volatile Memory Device

Versandkostenfrei!
Versandfertig in 6-10 Tagen
32,99 €
inkl. MwSt.
PAYBACK Punkte
16 °P sammeln!
Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conducti...