Reliability Study Of Ingap/gaas Heterojunction Bipolar Transistors
Xiang Liu
Broschiertes Buch

Reliability Study Of Ingap/gaas Heterojunction Bipolar Transistors

Characterization, Modeling And Simulation

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Nowadays InGaP/GaAs heterojunction bipolar transistors (HBTs) are the preferred technology of high-performance microwave monolithic integrated circuits (MMICs) due to their inherently excellent characteristics. With the smaller dimensions for improving functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, reliability issues are the first concern for the commercialization. To identify the origins of the electrothermal stress-induced device performance degradations observed experimentally, 2-D TCAD simulations were car...