Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Versandkostenfrei!
Versandfertig in 6-10 Tagen
75,99 €
inkl. MwSt.
Weitere Ausgaben:
PAYBACK Punkte
38 °P sammeln!
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology node...