Preparation and Characterization of CdS/CdTe Device for X-Ray Sensing
Chemical Bath Deposition and Electrodeposition Techiques for Preparation of Thin Films CdS/CdTe X-Ray Sensor
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Ionizing radiation detectors mainly depend on materials that had been fabricated decades ago, they were made by single crystal scintillators cesium and sodium iodide (CsI, NaI) or semiconductors like silicon (Si), high purity germanium (HPGe), and gas-filled tubes. However, the existing materials have some disadvantages, NaI(Tl) has poor resolution, (Si) has poor efficiency, while (HPGe) demands cooling system and all of them are high cost. In recent years, an international effort has been invested in developing a range of compound semiconductors with wide band gap and high atomic number for X...
Ionizing radiation detectors mainly depend on materials that had been fabricated decades ago, they were made by single crystal scintillators cesium and sodium iodide (CsI, NaI) or semiconductors like silicon (Si), high purity germanium (HPGe), and gas-filled tubes. However, the existing materials have some disadvantages, NaI(Tl) has poor resolution, (Si) has poor efficiency, while (HPGe) demands cooling system and all of them are high cost. In recent years, an international effort has been invested in developing a range of compound semiconductors with wide band gap and high atomic number for X and gamma ray detectors. Among the compound semiconductors, cadmium telluride (CdTe) is one of the most promising materials for radiation detectors with good energy resolution, high detection efficiency and room temperature operation. In this book, a stacked X-ray detector was fabricated, in which Mo/CdTe/CdS/FTO devices are stacked together and operated as a single detector. The work focused on optimizing the preparation of cadmium sulfide (CdS) thick film by CBD onto FTO glass substrate as well as optimizing the electrodeposition of CdTe onto the prepared CdS/FTO glass substrate.
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