Optimization of Electrical Parameters (CNTFET)
Optimization of Electrical Parameters for Carbon Nanotube field effect transistor (CNTFET)
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In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics...
In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena,including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section.
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