Next Generation MRAM Development
Masood Qazi
Broschiertes Buch

Next Generation MRAM Development

A 4kb MRAM Array for Spin Torque Transfer Switching Measurement

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Only recently has the possibility of a universal memory, a fast random access memory that retains its state during complete power-down, turned into a realizable opportunity. Such a memory can eliminate static power, improve system reliability in the face of power interruption, and eliminate the need for a separate FLASH memory module, reducing system component count. One candidate in the race for a universal memory is magnetoresistive random access memory (MRAM). In the development of MRAM, design challenges related to isolating memory elements, obtaining a compatible operating point with CMOS...