Nano-Transistor Scaling and their Characteristics using Monte Carlo
Islam AynulKarol Kalna
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Nano-Transistor Scaling and their Characteristics using Monte Carlo

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Chapter 1 gives detail of numerical results for 25nm SiNANO scale MOSFETs ((Metal Oxide Semiconductor Field Effect Transistor) using self-consistent ensemble Monte Carlo (MC) device simulation. The simulated results are electron velocity, sheet density, drain current with the shortening of gate length in the channel area, and ID - VG characteristics. Chapter 2 gives an overview on scaling of Si and In0.3Ga0.7As MOSFETs from a gate length of 25 nm to gate lengths of 20, 15, 10, and, ultimately, 5 nm, is carried out using ensemble Monte Carlo (MC) device simulations with quantum corrections. Cha...