Modulating Optoelectronic Properties in Multilayer QDs via FEM
Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method
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This book explores the electronic and optical properties of GaAs/Ga Al As multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pres...
This book explores the electronic and optical properties of GaAs/Ga Al As multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Ourresults contribute valuable insights for quantum dot-based device applications and future experimental research.
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