Modified Ferroelectric Materials
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We had synthesized and studies the three basic materials, such as, BaNd2-xLaxTi3O10 , BaNd2-xLaxTi4O12 and BaLa2-xCexTi3O10. The X-ray diffraction pattern confirms that the first two materials are of single phase having orthorhombic crystal structure. The scanning electron microscopy gives the average grain size is less than 2 m. The irregular shape and random orientation of grains was observed for BaNd2-xLaxTi3O10 and BaNd2-xLaxTi4O12. However the few systematic patterns like rods are observed in Cerium doped material. The temperature dependence of dielectric constant for BaNd2-xLaxTi3O10 mat...
We had synthesized and studies the three basic materials, such as, BaNd2-xLaxTi3O10 , BaNd2-xLaxTi4O12 and BaLa2-xCexTi3O10. The X-ray diffraction pattern confirms that the first two materials are of single phase having orthorhombic crystal structure. The scanning electron microscopy gives the average grain size is less than 2 m. The irregular shape and random orientation of grains was observed for BaNd2-xLaxTi3O10 and BaNd2-xLaxTi4O12. However the few systematic patterns like rods are observed in Cerium doped material. The temperature dependence of dielectric constant for BaNd2-xLaxTi3O10 material suggests that the material is of relaxor type and the transition temperature is far below the room temperature. In case of Cerium doped material the dielectric constant are observed to increase at x=0.6 and again decreases for x=0.8. In case of BaNd2-xLaxTi4O12 material we could not achieve any prominent information; nevertheless the need of high level doping concentration for this material is underlined. As far as D.C. electrical conductivity is concerned the simple two probe method confirms the material to be of PTCR and activation energy lies in the range of 0.4 to 0.6 eV.
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