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Materials, Properties and Preparation
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The availability of various novel materials, such as semiconductors, tailor-made polymers and ceramics, has revolutionized information processing and transmission. Since the early fifties, semiconductors have formed the backbone of different information age technologies.The fabrication of state-of-the-art semiconducting devices requires either substrates or composite structures consisting of thin epitaxial layers. Over the years, great strides have been made both in growing bulk crystals and in controlled deposition of thin homo- and hetero-epitaxial layers. Understanding of the deformation be...
The availability of various novel materials, such as semiconductors, tailor-made polymers and ceramics, has revolutionized information processing and transmission. Since the early fifties, semiconductors have formed the backbone of different information age technologies.The fabrication of state-of-the-art semiconducting devices requires either substrates or composite structures consisting of thin epitaxial layers. Over the years, great strides have been made both in growing bulk crystals and in controlled deposition of thin homo- and hetero-epitaxial layers. Understanding of the deformation behaviour of semiconductors has facilitated the growth of high-quality crystals. Heterostructures consisting of extremely thin layers and chemically and structurally sharp interfaces can be deposited. To tailor bandgaps and electronic properties, silicon-germanium/silicon heterojunctions, mixed III-V epitaxial layers that are ordered and phase separated and quantum-well structures have been grown. Also, to improve the optical, electrical and structural quality of as-grown bulk and thin film materials, a variety of interdisciplinary studies have been carried out that has resulted in a number of sophisticated techniques to evaluate semiconductors.In this volume, scientific issues relevant to these topics and others are discussed in detail. The coverage is in-depth and broad. The resulting volume should serve as a major reference source for education and research on semiconducting materials.
Table of contents:
1. Growth and evaluation of bulk crystals (J.-I. Chikawa and J. Matui). 2. Mechanical behaviour of semiconductors (K. Sumino). 3. MOCVD technology and its applications (M. Razeghi). 4. Growth mechanisms in MBE and CBE of III-V compounds (B.A. Joyce, D.D. Vvedensky, C.T. Foxon). 5. Growth of narrow bandgap semiconductors (D.L. Partin, J. Heremans). 6. Growth, characterization and device developments in large bandgap semiconductor thin films (R.F. Davis). 7. HgTe-CdTe superlattices (J.R. Meyer 'et al.'). 8. Si/Ge and Si/SiGe heterostructures and superlattices (K. Eberl, W. Wegscheider). 9. Amorphous semiconductors (M. Stutzmann). 10. Characterization and properties of semiconductors (G.E. Stillman 'et al.'). 11. Characterization of compound semiconductors by etching (J.L. Weyhes). 12. X-ray topography (P. Franzosi). 13. Evaluation of semiconductors using scanning microscopy (C.A. Warwick). 14. High resolution electron microscopy for semiconducting materials (J. Van Landuyt, J. Vanhellemont). 15. Dislocations in heteroepitaxial films (R. Beanland, C.J. Kiely, R. C. Pond). 16. Diffusion in semiconductors (A.F.W. Willoughby). 17. (Diluted) magnetic semiconductors (T. Dietl). 18. Impurity- and defect-centers in compound semiconductors (M. Skowronski). 19. Atomic ordering and phase separation in epitaxial III-V alloys (A. Zunger, S. Mahajan). 20. Hydrogen in crystalline semiconductors (E.E. Haller). 21. Carbon in mono-crystalline silicon (G. Davies, R.C. Newman). 22. Oxygen in silicon (H. Bender, J. Vanhellemont). 23. Chalcogen-related defects in silicon (H.G. Grimmeiss, E. Janzén). 24. Silicon crystals for giga-bit scale integration (T. Abe). 25. Epitaxial silicides (R.T. Tung). 26. Metal-compound semiconductor interactions (T. Sands, V.G. Keramidas). 27. Ion implantation of silicon and gallium arsenide (J.P. de Souza, D.K. Sadana). 28. Passivation and dielectrics (K.V. Srikrishnan, G.E. Schwartz).
Table of contents:
1. Growth and evaluation of bulk crystals (J.-I. Chikawa and J. Matui). 2. Mechanical behaviour of semiconductors (K. Sumino). 3. MOCVD technology and its applications (M. Razeghi). 4. Growth mechanisms in MBE and CBE of III-V compounds (B.A. Joyce, D.D. Vvedensky, C.T. Foxon). 5. Growth of narrow bandgap semiconductors (D.L. Partin, J. Heremans). 6. Growth, characterization and device developments in large bandgap semiconductor thin films (R.F. Davis). 7. HgTe-CdTe superlattices (J.R. Meyer 'et al.'). 8. Si/Ge and Si/SiGe heterostructures and superlattices (K. Eberl, W. Wegscheider). 9. Amorphous semiconductors (M. Stutzmann). 10. Characterization and properties of semiconductors (G.E. Stillman 'et al.'). 11. Characterization of compound semiconductors by etching (J.L. Weyhes). 12. X-ray topography (P. Franzosi). 13. Evaluation of semiconductors using scanning microscopy (C.A. Warwick). 14. High resolution electron microscopy for semiconducting materials (J. Van Landuyt, J. Vanhellemont). 15. Dislocations in heteroepitaxial films (R. Beanland, C.J. Kiely, R. C. Pond). 16. Diffusion in semiconductors (A.F.W. Willoughby). 17. (Diluted) magnetic semiconductors (T. Dietl). 18. Impurity- and defect-centers in compound semiconductors (M. Skowronski). 19. Atomic ordering and phase separation in epitaxial III-V alloys (A. Zunger, S. Mahajan). 20. Hydrogen in crystalline semiconductors (E.E. Haller). 21. Carbon in mono-crystalline silicon (G. Davies, R.C. Newman). 22. Oxygen in silicon (H. Bender, J. Vanhellemont). 23. Chalcogen-related defects in silicon (H.G. Grimmeiss, E. Janzén). 24. Silicon crystals for giga-bit scale integration (T. Abe). 25. Epitaxial silicides (R.T. Tung). 26. Metal-compound semiconductor interactions (T. Sands, V.G. Keramidas). 27. Ion implantation of silicon and gallium arsenide (J.P. de Souza, D.K. Sadana). 28. Passivation and dielectrics (K.V. Srikrishnan, G.E. Schwartz).