Low Frequency Noise Spectroscopy of SOI Wafers
Concepts, Methods, Applications
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The initial quality of the Silicon-On-Insulator (SOI) wafers is critical for the Low Frequency Noise (LFN) specifications. The LFN is one of the most important parameters for both the analog and the digital circuits. High silicon-buried oxide interface trap concentrations may cause excessive LFN in the circuits. The LFN spectrum can be measured only after the microchips have been manufactured. This book establishes a comprehensive method of evaluating the LFN parameters of the unprocessed SOI wafers utilizing the novel permanent pseudo MOSFET structures. The manuscript provides detailed descri...
The initial quality of the Silicon-On-Insulator
(SOI) wafers is critical for the Low Frequency Noise
(LFN) specifications. The LFN is one of the most
important parameters for both the analog and the
digital circuits. High silicon-buried oxide
interface trap concentrations may cause excessive
LFN in the circuits. The LFN spectrum can be
measured only after the microchips have been
manufactured. This book establishes a comprehensive
method of evaluating the LFN parameters of the
unprocessed SOI wafers utilizing the novel permanent
pseudo MOSFET structures.
The manuscript provides detailed description of the
equipment setup, calibration and procedures of the
LFN spectroscopy, paying special attention to the
challenges of LFN measurements and the ways of
interference elimination. The characterization
techniques using the permanent pseudo MOSFET are
introduced with the focus on the LFN reduction for
SOI circuits. The results for the variety of SOI
wafers are presented.
This book can be used by students, practicing
engineers and scientist as a reference or a studying
guide of the LFN issues in SOI circuits.
(SOI) wafers is critical for the Low Frequency Noise
(LFN) specifications. The LFN is one of the most
important parameters for both the analog and the
digital circuits. High silicon-buried oxide
interface trap concentrations may cause excessive
LFN in the circuits. The LFN spectrum can be
measured only after the microchips have been
manufactured. This book establishes a comprehensive
method of evaluating the LFN parameters of the
unprocessed SOI wafers utilizing the novel permanent
pseudo MOSFET structures.
The manuscript provides detailed description of the
equipment setup, calibration and procedures of the
LFN spectroscopy, paying special attention to the
challenges of LFN measurements and the ways of
interference elimination. The characterization
techniques using the permanent pseudo MOSFET are
introduced with the focus on the LFN reduction for
SOI circuits. The results for the variety of SOI
wafers are presented.
This book can be used by students, practicing
engineers and scientist as a reference or a studying
guide of the LFN issues in SOI circuits.
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