Localization phenomenon in semiconductors; InGaAs, BGaAs and BInGaAs
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In this work, we have studied the optical properties of InGaAs, BGaAs and BInGaAs by photoluminescence experiment study. We have obtained an abnormal behaviors in keys of luminescence (N or W-shape in PL- line width, S-shape in energy..) as function of a temperature. A localized state ensemeble LSE model was employed to reproduce very well these behaviors and to extract the depth of localisation energy.
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