Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera
Thomas R. Jost
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Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera

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Semiconductor performance is often characterized in terms of the rate at which its carrier recombination processes occur. Carrier recombination, including radiative, and Schockley-Read-Hall and Auger (both nonradiative), occurs at ultra-fast times in the picosecond or femtosecond regimes. A device which can measure both spectral data and temporal phenomena at this speed is the streak camera. The capability to do time-resolved spectroscopy of wide band gap semiconductors using a streak camera has been established at AFIT for the first time. Time resolved photoluminescence (TRPL) from samples of...