IR blocking and transparent in visible and THz filters
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Here are presented the original results on the technology development of low-temperature synthesis (up to the room temperature) of AlN thin polycrystalline films with high thermal conductivity (Gamma = 140-180 W/m·K). The essential feature of proposed technological method is the combined use of the helicon sources of low-temperature plasma and elaborated the vacuum-arc sources, which allow the formation of multicomponent functional nanostructures. The technology developed provides good AlN films adhesion to flexible polymeric Teflon and Mylar substrates and are efficient infrared (IR) blockin...
Here are presented the original results on the technology development of low-temperature synthesis (up to the room temperature) of AlN thin polycrystalline films with high thermal conductivity (Gamma = 140-180 W/m·K). The essential feature of proposed technological method is the combined use of the helicon sources of low-temperature plasma and elaborated the vacuum-arc sources, which allow the formation of multicomponent functional nanostructures. The technology developed provides good AlN films adhesion to flexible polymeric Teflon and Mylar substrates and are efficient infrared (IR) blocking filters (IR "stealth") that suppress heat flows from the warm parts of objects (T ~ 300-500 K) and block IR radiation from them but are transparent in visible, microwave and THZ spectral regions. It was shown that AlN thin layers on flexible polymeric substrates can be used as filters providing low-loss radiation transmission (t ~ 80-95 %) in the microwave and THz regions (radiation frequency ni ~ 2-270 GHz). These films are also transparent in the visible range but are blocking (up to 85% in 7-20 µm region) the IR radiation.
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