Investigation of Electrical Properties of(p-n) Junction Porous Silicon

Investigation of Electrical Properties of(p-n) Junction Porous Silicon

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Chapter one presents a brief introduction and enunciates the objectives of our investigations also presents a review of the physics of semiconductor nanostructures. chapter two gives details of the etching process,the techniques employed to porous silicon nanostructures,chapter three describes instruments and devices employed in this work.chapter four we have presented the results and discussions of the surface morphology of the reconstructed surfaces etched by photo-electro chemical etching including details The morphological aspects like: pore width, pore shape and wall thickness between two...