Investigating properties of GaSbNBi for optoelectronic applications
Utsa Das
Broschiertes Buch

Investigating properties of GaSbNBi for optoelectronic applications

An approach employing semi-empirical modelling and Density Functional Theory (DFT)

Versandkostenfrei!
Versandfertig in 6-10 Tagen
40,99 €
inkl. MwSt.
PAYBACK Punkte
20 °P sammeln!
This monograph focuses on investigating the impact due to the co-incorporation of N and Bi in GaSb leading to the formation ofGaSb1-x-yNyBix alloy. The condition for lattice matching of GaSb1-x-yNyBix / GaSb is achieved at [N: Bi] ~ 0.14. The study employs semi-empirical model and DFT package for analysis and prediction of the alloy properties. The incorporation of N (Bi) in GaSb leads to the formation of resonant impurity state which interacts with conduction band minimum (valence band maximum), splitting it into sub-band energy levels causing band gap reduction. The structural analysis ofGaS...