High-k/Metal-gate Devices for Future CMOS Technology
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The present work addresses the investigation ofhigh-? dielectrics and their applicability inCMOS-devices, using metal-gate electrodes. Thecontents firstly include the deposition of zirconiumdioxide and hafnium dioxide from the gas phase, usingorganometallic precursors, and their physico-chemicalcharacterization. Furthermore, these material systemsare investigated regarding their thermodynamicalstability.In the following, MOS-capacitors are fabricated bythe selective deposition of gate electrodes made fromaluminum, molybdenum, nickel, or titanium-nitride,and characterized regarding their electr...
The present work addresses the investigation of
high-? dielectrics and their applicability in
CMOS-devices, using metal-gate electrodes. The
contents firstly include the deposition of zirconium
dioxide and hafnium dioxide from the gas phase, using
organometallic precursors, and their physico-chemical
characterization. Furthermore, these material systems
are investigated regarding their thermodynamical
stability.
In the following, MOS-capacitors are fabricated by
the selective deposition of gate electrodes made from
aluminum, molybdenum, nickel, or titanium-nitride,
and characterized regarding their electrical behavior.
Results within this work demonstrate that well
balanced and correctly applied annealing of the
devices clearly improves electrical behavior. We
attribute these materials high potential to be
applied in near-future CMOS-technology.
high-? dielectrics and their applicability in
CMOS-devices, using metal-gate electrodes. The
contents firstly include the deposition of zirconium
dioxide and hafnium dioxide from the gas phase, using
organometallic precursors, and their physico-chemical
characterization. Furthermore, these material systems
are investigated regarding their thermodynamical
stability.
In the following, MOS-capacitors are fabricated by
the selective deposition of gate electrodes made from
aluminum, molybdenum, nickel, or titanium-nitride,
and characterized regarding their electrical behavior.
Results within this work demonstrate that well
balanced and correctly applied annealing of the
devices clearly improves electrical behavior. We
attribute these materials high potential to be
applied in near-future CMOS-technology.
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