High-k Gate Dielectrics and Diffusion Barriers in Cu Metallization
Prodyut Majumder
Broschiertes Buch

High-k Gate Dielectrics and Diffusion Barriers in Cu Metallization

Materials, Growth and Performance

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Scaling of silicon technology has entered an era of material limited device scaling , as fundamental physical limits have been reached with traditional CMOS materials. At the heart of the silicon MOSFET, new alternative high-k dielectric materials and metal gate electrodes are required to reduce gate leakage currents and decrease EOT. This book outlines the critical properties of potential high-k gate dielectric materials that provide a physically thicker layer to suppress the quantum mechanical tunneling through the dielectric layer. The emphasis is on the characterization of structural and e...