Hierarchy of Semiconductor Equations: Relaxation Limits with Initial Layers for Large Initial Data

Hierarchy of Semiconductor Equations: Relaxation Limits with Initial Layers for Large Initial Data

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This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations amon...