Heteroepitaxy of Wide Band Gap Semiconductors on Silicon Substrates
Jianwei Wan
Broschiertes Buch

Heteroepitaxy of Wide Band Gap Semiconductors on Silicon Substrates

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The wide band gap semiconductors SiC and GaN have shown great potential for use in high-temperature, high-power and high-frequency electronic devices as well as short-wavelength optical devices. However, the lack of large-area and low-cost substrates hindered their development seriously. Thus, the heteroepitaxy of SiC and GaN on silicon substrates is highly desirable for the Si-based electronic industry. In this study, we investigated the epitaxy of 3C-SiC and hexagonal GaN on silicon substrates and related devices. High quality 3C-SiC epilayers were deposited with trimethylsilane and silane/p...