Heteroepitaxial Growth of GaN: Role of Surface Modifications

Heteroepitaxial Growth of GaN: Role of Surface Modifications

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This work has been motivated by the outstanding need to prepare suitable substrate for growth of III-nitride heteroepitaxial thin films. The issue of lattice and thermal expansion mismatches between the substrates and overlayers, which results in a high threading dislocation density in the films, is seen to be detrimental to photon and carrier transport in these systems. Thus, looking for appropriate substrates or modifying substrates appropriately, has attracted enormous attentions. The work includes the chemical and structural modifications of silicon, gallium arsenide and sapphire substrate...