Growth and Characterizations of GeS0.5Se0.5 (I2) Single Crystals
Using Chemical Vapour Transport Technique
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The research presented in this book is the experimental work on Growth and Characterizations of Ge S0.5 Se0.5 (I2) single crystals with Chemical Vapour Transport Technique, using Iodine (I2)as a transporting agent. The stoichiometric proportion of constituent elements are confirmed by Energy Dispersive Analysis of X-rays (EDAX). The Structural Parameters are obtained from the X-ray diffraction technique. Four Probe Resistivity Method, High-Pressure Resistivity Method, and Thermoelectric Power Measurements are used to obtain Electrical Parameters of the grown crystal. Optical Band Gap of the gr...
The research presented in this book is the experimental work on Growth and Characterizations of Ge S0.5 Se0.5 (I2) single crystals with Chemical Vapour Transport Technique, using Iodine (I2)as a transporting agent. The stoichiometric proportion of constituent elements are confirmed by Energy Dispersive Analysis of X-rays (EDAX). The Structural Parameters are obtained from the X-ray diffraction technique. Four Probe Resistivity Method, High-Pressure Resistivity Method, and Thermoelectric Power Measurements are used to obtain Electrical Parameters of the grown crystal. Optical Band Gap of the grown crystals is derived from UV-Vis Spectroscopy data.
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