Fabrication of Nanodevices Using Nanowire and Physical Properties
Sunghun Lee
Broschiertes Buch

Fabrication of Nanodevices Using Nanowire and Physical Properties

Fabrication of Nanodevice Using Individual Single Crystalline Nanowire and Their Physical Property Measurements

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The nandevice using individual nanowire (NW) is fabricated by e-beam lithography process. This process includes plasma ashing, evaporation of metal electrodes, and thermal rapid annealing. With the final product nanodevice, the change of resistance depending on the external magnetic field and temperature is measured. In this manuscript, single crystalline NWs used for measurement of physical properties are as followed: CoSi, Fe1-xCoxSi, InN, Fe5Si3, Co2Si, V5Si3. CoSi NWs show the negagive magnetoresistance (MR) due to reduction of scattering between electrons influenced by magnetic field and ...