Electronic Quenching of the A(0+ U) State of Bi2
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Temporally-resolved laser induced fluorescence of high vibrational levels in Bi2 A( ??u 0) above and below the predissociation limit of v'=22 were investigated by observing total fluorescence from a wavelength tunable, pulsed dye laser. Electronic quenching of Bi2 A(??u 0 ) by five collision partners (Ne, Ar, Kr, Xe, N2) was examined for four vibrational levels (v'=22, 23, 24, 25). Electronic quenching by a sixth collision partner (He) was examined for eight vibrational levels (v'=18 through 25). The quenching from stable vibrational levels (v'??22) was independent of vibrational quantum numbe...
Temporally-resolved laser induced fluorescence of high vibrational levels in Bi2 A( ??u 0) above and below the predissociation limit of v'=22 were investigated by observing total fluorescence from a wavelength tunable, pulsed dye laser. Electronic quenching of Bi2 A(??u 0 ) by five collision partners (Ne, Ar, Kr, Xe, N2) was examined for four vibrational levels (v'=22, 23, 24, 25). Electronic quenching by a sixth collision partner (He) was examined for eight vibrational levels (v'=18 through 25). The quenching from stable vibrational levels (v'??22) was independent of vibrational quantum number. A significant increase in quenching occurs for the predissociated level v'=23. Electronic quenching transfer rates ranged from 227.3 to 850.5x10-13 cm3 molec-1 sec-1 for v'=22 and from 741.2 to 1570x10-13 cm3 molec-1 sec-1 for v'=23, and are very nearly gas kinetic for v'=23. Electronic quenching of higher vibrational levels (v'>23) was not temporally resolvable by the experimental apparatus.
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